Bipolar Transistor

ABSTRACT

A bipolar transistor and a method for fabricating a bipolar transistor are disclosed. In one embodiment the bipolar transistor includes a semiconductor body including a collector region and a base region arranged on top of the collector region, the collector region being doped with dopants of a second doping type and the base region being at least partly doped with dopants of a first doping type and an insulating spacers arranged on top of the base region. The semiconductor body further includes a semiconductor layer including an emitter region arranged on the base region and laterally enclosed by the spacers, the emitter region being doped with dopants of the second doping type forming a pn-junction with the base region, wherein the emitter region is fully located above a horizontal plane through a bottom side of the spacers

This application is a divisional of U.S. application Ser. No.14/267,651, filed on May 1, 2014, which application is herebyincorporated herein by reference in its entirety.

TECHNICAL FIELD

The present disclosure relates to the field of bipolar transistors (BTs)such as, e.g., heterojunction bipolar transistors (HBTs) with animproved high frequency performance. Particularly, a bipolar transistorand a method for fabricating bipolar transistors is disclosed.

BACKGROUND

Bipolar transistors are generally constructed from two pn-junctionslying close together in a semiconductor crystal. In differentconfigurations, either two n-doped regions are separated from oneanother by a p-doped region (npn transistors) or two p-doped regions byan n-doped region (pnp transistors). The three differently doped regionsare referred to as the emitter, the base, and the collector. Therefore,a bipolar transistor is essentially a three terminal device having threedoped regions of alternating doping type.

Bipolar transistors may exhibit desirable features such as high currentgain and a very high cut-off frequency for switching applications, andhigh power gain and power density for microwave amplifier applications.These features make bipolar transistors important components in logiccircuits, communications systems, and microwave devices. As with othertypes of semiconductor devices, there is a demand for bipolartransistors having increasingly higher operating frequencies and/orswitching speeds. Since their invention in 1947, many attempts have beenmade to meet these demands and improve the performance of suchtransistors with respect to their speed, power, and frequencycharacteristics. These attempts have focused on making devices bettersuited for high frequency applications such as microwave and logicdevices. One particular way to meet these demands for higher frequencyoperation is to provide a device with a low base resistance and a lowbase-collector capacitance.

SUMMARY

A bipolar transistor is described. In accordance with one aspect of thepresent invention the bipolar transistor comprises a semiconductor bodythat includes a collector region and a base region arranged on top ofthe collector region. The collector region is doped with dopants of asecond doping type and the base region is, at least partly, doped withdopants of a first doping type. Insulating spacers are arranged on topof the base region. This semiconductor layer is laterally enclosed bythe spacers and is doped with dopants of the second doping type toprovide an emitter region that forms a pn-junction with the base region,wherein the emitter region is fully located above a horizontal planethrough a bottom side of the spacers.

Furthermore, a method for fabricating a bipolar transistor is disclosed.In accordance with a first example, the method comprises providing asemiconductor body that includes a collector region and a base region,which is arranged on top of the collector region. The collector regionis doped with dopants of a second doping type, and the base region is,at least partially, doped with dopants of a first doping type. Themethod further comprises forming insulating spacers on top of the baseregion and, after forming the spacers, depositing a first semiconductorlayer on top of the base region, so that the spacers enclose the firstsemiconductor layer. After depositing the first semiconductor layer asecond semiconductor layer, which is doped with dopants of the seconddoping type, is deposited on top of the first semiconductor layer. Thesecond layer is more heavily doped than the first semiconductor layer.Subsequently, elevated temperatures are applied to the semiconductorbody, so that dopants diffuse out of the second semiconductor layer intothe first semiconductor layer thus forming an emitter region of the BTin the first and second semiconductor layer.

In accordance with another example of the invention, the methodcomprises providing a semiconductor body, which includes a collectorregion and a base region arranged on top of the collector region. Thecollector region is doped with dopants of a second doping type and thebase region is, at least partially, doped with dopants of a first dopingtype. The method further forming insulating spacers on top of the baseregion and, depositing a first semiconductor layer on top of the baseregion, and depositing a second semiconductor layer, which is doped withdopants of the second doping type, on top of the first semiconductorlayer, so that the spacers enclose the first and the secondsemiconductor layers. Elevated temperatures are applied to thesemiconductor body so that dopants diffuse out of the secondsemiconductor layer into the first semiconductor layer thus forming anemitter region of the BT in the first and second semiconductor layer.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention can be better understood with reference to the followingdrawings and descriptions. The components in the figures are notnecessarily to scale; in-stead emphasis is placed upon illustrating theprinciples of the invention. More-over, in the figures, like referencenumerals designate corresponding parts. In the drawings:

FIG. 1 illustrates one example of a bipolar transistor resulting from aconventional bipolar or BICMOS manufacturing process;

FIG. 2 illustrates one example of an improved bipolar transistorresulting from a bipolar or BICMOS manufacturing process describedherein; and

FIGS. 3A-3K describe one example of a process for manufacturing abipolar transistor as shown in FIG. 2;

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

FIG. 1 illustrates a cross sectional view of an exemplary bipolartransistor (BT), which may be fabricated using known bipolar or BICMOStechnologies. The transistor is integrated in a semiconductor substrate10 which is doped with dopants of a first doping type; in the presentexample a p-doped silicon substrate (silicon wafer) is used to form annpn-type BT. The substrate 10 may include an epitaxial layer 10′ formedon a silicon wafer. A buried contact region 11 is arranged in thesubstrate 10. A collector terminal (not shown) is electrically connectedto the contact region 11 to electrically connect a collector region 12,which is arranged in the substrate 10 or the epitaxial layer 10′ abovethe buried contact region 11 and doped with dopants of the second dopingtype (n-type dopants in the present case). The collector region usuallyhas a higher concentration of dopants than the substrate 10. Thementioned epitaxial layer 10′ may include the collector region 12 formedon top of the buried contact region 11. The buried contact region 12 maybe also formed using epitaxy. However, ion implantation or diffusion ofdopants may be alternatively used.

FIG. 1 also illustrates a deep trench 50 extending vertically into thesubstrate, thus forming a deep trench isolation (DTI) for isolating thecontact region 11 in a lateral direction against the surroundingsubstrate 10. Trenches 51 are arranged in the substrate to form ashallow trench isolation (STI). In the cross section the shallowtrenches 51 are spaced apart such that the mentioned collector regionlies (in a horizontal direction) in between the trenches 51. Thetrenches 51 are filled with an insulating dielectric material, e.g.,silicon oxide. In a top view (not shown) the trench 51 may define aquadratic a hexagonal or a circular structure. The deep trench 50 isarranged under the left shallow trench 51. The contact region extendshorizontally below the right shallow trench 51. An insulating layer 52(e.g., silicon oxide layer) is arranged on top of the substrate 10 (andthe shallow trenches 51). The insulating layer 52 is structured byforming an opening through the layer 52. The opening may be aligned withthe opposing side walls of the two shallow trenches 51.

A base region 20 is disposed in the opening of insulating layer 52 suchthat the base region 20 lies vertically above the collector region 12and adjoins the collector region 12 and the surrounding substrate 10.The base region 20 is doped with dopants of the first doping type. Inthe present example, the base region 20 is p-doped to form an npn-typeBT. The base region 20 may be formed of silicon. However, othersemiconductor material may be applicable, e.g., SiGe, to form aheterojunction bipolar transistor (HBT). The concentration of dopants isnot homogenous within the base region. In a vertical direction, thedopant concentration exhibits a maximum within the base region 20. Thismaximum is depicted as highly doped layer 21 extending horizontallythrough the base region 20. This highly doped layer 21 may be regardedas “base” of the BT. The upper portion of the p-doped base region 20,which is above the highly doped layer 21 (base), has a thickness d₁ in avertical direction. This upper portion is referred to as Si-Cap.

Above the insulating layer 52 and the Si-Cap a base contact layer 22 isdeposited. For example, polycrystalline silicon may be used fordepositing the base contact layer 22. An opening is formed in the basecontact layer 22 above the central region of the Si-Cap. As a result,the base contact layer 22 extends in a horizontal direction on bothsides of the Si-Cap and overlaps the Si-Cap (upper portion of baseregion 20) only at its boundary area. The base contact layer 22 isisolated by a further insulating layer 53 (e.g., silicon oxide layer)disposed on the base contact layer 22. The side surfaces of the basecontact layer (of the opening in the layer 22) are isolated by spacers40, which may also be formed of silicon oxide. As a result a cavity(similar to a trench) is formed which extends from the top surface ofthe insulating layer 53 through the layer 53 and the base contact layer22 down to the Si-Cap. The side-walls of this trench is covered by thementioned oxide spacers 40. The trench is at least partially filled bydeposition of a doped semiconductor layer 30 (silicon or a differentmaterial such as SiGe for some types of HBTs), which forms an emitterregion. The semiconductor layer 30 contacts the Si-Cap at the bottom ofthe mentioned trench and covers the side surfaces of the spacers 40 andthe adjoining portion of the top surface of the insulation layer 53.

The semiconductor layer 30 is doped with dopants of the second dopingtype. In the present example, the emitter region (and thus the layer 30)is n-doped to form an npn-type BT. During the production process,diffusion region 31 is formed within the Si-Cap as dopants diffuse intothe Si-Cap, i.e., the upper region of the base region 20. The verticalthickness of the diffusion region 31 is labelled d₂. In other words, d₂is the depth which atoms may diffuse from the semiconductor layer 30into the Si-Cap. In practice, the depth d₁ is about 10 nm to 30 nm. Asthe diffusion is an omnidirectional process, the diffusion region 31also extends in the horizontal direction under the spacer 40. Thus, theeffective distance between the emitter and the highly doped base 20 isthe difference d₁−d₂ between the distance d₁ and the diffusion depth d₂.In essence, the diffusion region 31 is a portion of the emitter region30, as the concentration of dopants in the diffusion region 31 is in thesame order of magnitude as the concentration of dopants in thesemiconductor layer 30 above.

Due to the sideward diffusion under the spacer 40, the (lateral) widthd₃ of the spacer has to be thicker than the diffusion depth d₂ in orderto avoid a shortcut between the emitter region (including the diffusionregion 31) and the base contact region 22. Furthermore, the distance d₁between the base contact region 22 and the highly doped base 21 has tobe chosen greater than the diffusion depth d₂, which is comparably highand thus results in a comparably high base resistance. In currenttechnologies the minimum width d₃ of the spacer 40 has to be chosenbetween 30 nm and 100 nm. This prevents further lateral downscaling ofthe transistor and reduction of the base-collector-capacitance and otherimportant parameters such as base resistance and base-emittercapacitance.

The example of FIG. 2 is essentially identical with the example of FIG.1, with the only difference, that the diffusion of the emitter into thebase region 20 (diffusion region 31) is avoided by using an improvedproduction process which will be explained further below. This allows areduction of the distance d₁ between the highly doped base (layer 21)and the base contact layer 22, which results in a lower base resistanceand thus allows a higher maximum oscillation frequency of the bipolartransistor. Furthermore, the width d₃ of the spacer 40 may be chosensmaller, thus allowing for a further miniaturization of the transistor.

The diffusion of the emitter into the base region 20 (diffusion region31) is avoided by using a two-step emitter deposition when depositingthe emitter region 30. In a first step, a practically undopedsemiconductor material is deposited in the above-mentioned trench,similar as described with respect to the emitter region 30 in theexample FIG. 1. Practically undoped means a doping concentration so lowthat practically the same result is achieved as if undoped materialwould be used. For example, a doping concentration which is an order ofmagnitude (factor 10) lower that the doping concentration of the finalemitter region, can be regarded as practically undoped, as such lowdoping concentration has no significant electrical effect. The resulting(practically) undoped layer 31′ contacts the Si-Cap at the bottom of theabove-mentioned trench and covers the side surfaces of the spacers 40and the adjoining portion of the top surface of the insulation layer 53.On top of this undoped layer 31′ a further layer 30′ of dopedsemiconductor material is deposited. The layer 30′ is doped usingdopants of the second dopant type, which is an n-type dopant in thepresent example to form an npn-type BT. During the further productionprocess dopants diffuse out of the layer 30′ into the undoped layer 31′thus forming the emitter region (cf. emitter to region 30 in the exampleof FIG. 1). The thickness of the undoped layer 31′ may be chosen such,that the diffusion region formed in the layer 31 does not significantlyextend into the base region 20.

Below, one exemplary production process for fabricating the BT shown inFIG. 2 is described referring to the FIGS. 3A through 3K. It isunderstood that, in an actual implementation of the process, the orderof the steps may be different from the order described herein.Furthermore, some steps may be substituted with one or more other stepsyielding essentially the same result.

The further description starts with a semiconductor substrate 10including a buried contact region 11 and a deep trench installation 50as shown in FIG. 3A. The substrate 10 is p-doped, and the buried contactregions 11 is doped with n-type dopants, wherein the concentration ofdopants is higher in the contact region 11 than in the surroundingsubstrate 10. Methods for providing such substrate with buried contactregions and deep trench isolation (DTI) are as such known and thus notfurther described here in more detail. In the present example, theburied contact region is formed by “burying” the contact region by anepitaxial layer 10′ which may be lightly n-doped (but may also bep-doped dependent on the actual implementation of the method).

As shown in FIG. 3B shallow trenches 51 are formed in the substrate 10and the epitaxial layer 10′ and filled with insulating material (e.g.,silicon oxide) to form a so-called shallow trench isolation (STI). Inthe present example of FIG. 3B shallow trenches 51 are shown, which havea specific spacing. The portion of the epitaxial layer 10′ between theshallow trenches will later serve as collector region of the BT (seeFIG. 3F). Subsequently an insulating layer 52 (e.g., silicon oxide) isformed on top of the epitaxial layer 10′. As shown in FIG. 3C a contactlayer 22 of conductive material (e.g., polycrystalline silicon) isdeposited on top of the insulating layer 52. The contact layer 22 willlater serve as base contact region, which is used to electricallyconnect the base of the BT with an external base terminal. On top of thecontact layer 22 another insulating layer 53 is formed (e.g., a siliconoxide layer), which is again covered by another insulating layer 54 thattypically consists of another material than the insulating layer 53(e.g., silicon nitride).

As can be seen in FIG. 3D, an opening O₁ is formed through the layers54, 53 and 22. This can be accomplished by employing photolithographyand anisotropic etching. The opening O₁ extends from the top of theinsulating layer 54 down to the insulating layer 52, so that insulatinglayer 52 forms the bottom of the opening O₁. Subsequently, spacers 55are formed on the side surface of the opening O₁. The spacers 55 may beof the same material as the insulating layer 54, e.g., nitride. Thissituation is shown in FIG. 3E. In a following step (see FIG. 3F) aportion of the insulating layer 52 is removed using isotropic etchingthrough the opening O₁. As can be seen in FIG. 3F the top surface of theepitaxial layer 10′ is exposed by the mentioned isotropic etching. Dueto undercutting the insulating layer 52 is removed throughout a widtha₂, which is larger than the width a₁ of the opening O₁. Before or afterthe etching of the insulating layer 52, a highly doped collector region12 is formed in the epitaxial layer 10′ at the bottom of the opening O₁.The collector region 12 may be produced using ion implantation ordiffusion of dopants into the surface of the epitaxial layer 10′, whichmay be done even before etching the opening O₁. The lateral width of thecollector region 12 may be approximately the same as the lateral widtha₁ of the opening O₁, i.e., the collector region 12 is verticallyaligned with the spacers 55. The collector region 12 extends from thetop of the epitaxial layer 10′ down to the contact region 11, by whichthe collector region 12 is electrically contacted. The dopants used fordoping the collector region 12 are of the second doping type, i.e., thecollective region 12 is n-doped in the present example. Theconcentration of dopants in the collector region 12 is significantlyhigher than the concentration of dopants in the surrounding epitaxiallayer 10′. To indicate this, the doping type is labeled as n+ in FIG.3F.

The cavity formed by removing a portion of the insulating layer 52 isthen filled (see FIG. 3G) with semiconductor material (e.g., SiGe orsilicon) using epitaxy to form a base region 20, which is doped withdopants of the first doping type. In the present example, the baseregion 20 is p-doped to form an npn-type BT. In a vertical direction,the base region 20 extends from the top surface of the epitaxial layer10′ to the bottom surface of the base contact layer 22. In a horizontaldirection, the base region 20 fills the opening which has been formed inthe insulating layer 52 in the previous etching step. During depositionof the base region 20 the concentration of dopants is varied so that themaximum concentration of dopants in the base region 20 lies in a thinbase layer 21. In a horizontal direction, the thin highly doped baselayer 21 extends, through the whole base region 20 at a distance d₁ fromthe top surface of the base layer 20. Thus the distance between the thinhighly doped base layer 21 and the base contact region 22 also equalsd₁. This parameter d₁ essentially determines the base resistance in thecurrent path from the external base terminal (not shown) through thebase contact region 22 to the highly doped base layer 21. The baseresistance can be regarded as an ohmic resistor connected in series tothe base-emitter-diode of the BT. This situation is shown in FIG. 3G.

After deposition of the base region 20, the insulation layer 54 as wellas the spacers 55 are removed by etching (e.g., using phosphoric acid incase of silicon nitride insulation layer and spacers). In theillustration of FIG. 3G the insulation layer 54 and spacers 55 have beenremoved. Thus the insulation layer 53 (oxide layer) is exposed. In thenext step a further insulation layer 53′ is deposited on the top surfaceof the insulation layer 53 and the base region 20 as shown in FIG. 3H.The side surfaces of the cavity O₁, i.e., the exposed side surfaces oflayers 53 and 22, are also covered with material (e.g., silicon oxide)of insulation layer 53′. Subsequently, the insulation layer 53′ is againremoved by anisotropic etching, thereby again exposing the silicon ofthe base region 20 as well as insulation layer 53. However, spacers 40remain on the side surfaces of the layers 53 and 22, i.e., on the sidesurfaces of the cavity O₁. In essence, the spacers 55, which may be madeof silicon nitride, are replaced by the spacers 40, which may be made ofsilicon oxide. This situation is shown in FIG. 3I.

It is understood that there may be many different processes which resultin a structure as shown in FIG. 3I or an equivalent structure. In allthese processes, however, an undoped silicon layer 31′ is deposited ontop on the structure shown in FIG. 3J, e.g., using epitaxy. The undopedsilicon layer 31′ covers the top surface of the insulation layer 53 aswell as the top surface of the base region 20 and the side surfaces ofthe spacers 40. This situation is shown in FIG. 3J. On top of theundoped silicon layer 31′ a further silicon layer 30′ is deposited,e.g., using epitaxy. This further silicon layer 30′ is doped usingdopants of the second doping type, which are n-type dopants in thepresent example to form an npn-type BT. The silicon layers 30′ and 31′may be structured, e.g., using, a resist mask and unisotropic etching.Together the silicon layers 30′ and 31′ form the emitter region 30 ofthe BT. The resulting structure is shown in FIG. 3K. During the furtherprocess the semiconductor component is subject to a heat treatment, andas a result dopants diffuse out from the doped silicon layer 30′ intothe undoped silicon layer 31′, thus forming one doped emitter region.However, diffusion into the base region 20 as shown in FIG. 1 is avoidedby an appropriate dimensioning of the undoped silicon layer 31′. Afterthe mentioned diffusion of dopants into the undoped silicon layer 31′the border between the undoped silicon layer 31′ and the doped siliconlayer 30 becomes blurred resulting in a structure as shown in FIG. 2. Asmentioned, together the silicon layers 30′ and 31′ form the emitterregion 30 of the BT.

Below some important aspects of the embodiments described herein aresummarized. It should be noted, however, that this is an exemplary andnot an exhaustive enumeration of features. As described above, a bipolartransistor may include a semiconductor body 10 including a collectorregion 12 and a base region 20 (including the highly doped base layer21) arranged on top of the collector region 12. The semiconductor body10 may include an epitaxial layer 10′ (see, e.g., FIG. 2) The collectorregion 12 is doped with dopants of a second doping type (e.g., n-type)and the base region 20 is at least partly doped with dopants of a firstdoping type (p-type). In particular, the base layer 21 included in thebase region may be highly p-doped. Insulating spacers 40 are arranged ontop of the base region 20. A semiconductor layer (comprising sub-layers30′ and 31′) is arranged on the base region 20 and laterally enclosed(and confined) by the spacers 40. The semiconductor layer (i.e., layers30′ and 31′) is doped with dopants of the second doping type (e.g.,n-type) to provide an emitter region 30 that forms a pn-junction withthe base region 20. The emitter region 30 is fully located above ahorizontal plane (see plane labelled A in FIG. 2) through a bottom sideof the spacers 40.

In other words, a diffusion of a significant dose of emitter dopants ofthe second type into the base region is avoided (such as the diffusionregion 31 in FIG. 1), and the emitter region therefore does not extendinto the base region 20 and in regions under the spacers. This isaccomplished by a two-step deposition of the semiconductor layer, whichincludes the sub-layers 30′ and 31′ (see FIG. 2 and FIG. 3K), whereinthe lower layer 31′, which is deposited on the base region 20, ispractically undoped. In this context practically undoped denotes aconcentration of dopants which is so low that not significant amount ofdopants diffuse out from the layer 30′ into the base region 20 duringfollowing thermal treatment(s) and a diffusion zone 31 as shown in FIG.1 is avoided.

The final emitter region (including sub-layers 30′ and 31′) of thesecond doping type is laterally confined by the spacers 40 and does notextend into the base region 20. The semiconductor layer may furtherextend throughout opposing inner side-walls of the spacers 40. Thecollector region 12 may be laterally enclosed by the shallow trenchisolation 51, and the base region 20 may be laterally enclosed byportions of the first isolation layer 52. A conductive base contactlayer 22 (e.g., polycrystalline silicon) may be arranged on the firstisolation layer 52 and partially on the base region 20 to contact thebase region. A second insulating layer 53 may arranged in the basecontact layer 22, wherein the spacers 40 extend vertically through thesecond insulating layer 53 and the base contact layer 22 down to the topsurface of the base region 20.

To electrically contact the collector, the semiconductor body mayinclude a highly doped buried collector contact region 11 which adjoinsthe collector region 12 at its bottom side. The base region 20 includesa base layer 21 of the first doping type (e.g., p-type). The base layer21 is more heavily doped than the other portions of the base layer 20.

Another aspect of this description relates to a method for fabricating abipolar transistor. The method includes providing a semiconductor body10 including a collector region 12 and a base region 20 arranged on topof the collector region 12. The collector region 12 is doped withdopants of a second doping type and the base region 20 is at leastpartially doped with dopants of a first doping type (e.g., see FIG. 3G)The semiconductor body may include a silicon substrate and an epitaxiallayer disposed on the substrate. The method further includes forminginsulating spacers 40 on top of the base region 20 (see FIGS. 3H and3I). After forming the spacers 40 a first semiconductor layer 31′ isdisposed on top of the base region 20, so that the spacers 40 laterallyenclose and confine the first semiconductor layer 31′ at its interfacewith the base region 20 (see FIG. 3J). After depositing the firstsemiconductor layer 31′, a second semiconductor layer 30′ is disposed ontop of the first semiconductor layer 31′. The second layer 30′ is dopedwith dopants of the second doping type and more heavily doped than thefirst semiconductor layer 31′. The first semiconductor layer 31′ may bepractically undoped. Elevated temperatures are applied to thesemiconductor body so that dopants diffuse out of the secondsemiconductor layer 30′ into the first semiconductor layer 31′ thusforming an emitter region 30 of the BT in the first and secondsemiconductor layer 30′ and 31′.

Another exemplary method for fabricating a bipolar transistor includesproviding a semiconductor body 10 including a collector region 12 and abase region 20 arranged on top of the collector region 12. The collectorregion 12 is doped with dopants of a second doping type and the baseregion 20 being doped with dopants of a first doping type (see FIG. 3F).The method further includes forming insulating spacers 40 on top of thebase region 20 (see FIGS. 3H and 3I) and depositing a firstsemiconductor layer 31′ on top of the base region 20 such that the firstsemiconductor layer 31′ is laterally enclosed by the spacers 40 at leastat the interface with the base region 20 (see FIG. 3J). A secondsemiconductor layer 30′, which is doped with dopants of the seconddoping type, is deposited on top of the first semiconductor layer 31′(see FIG. 3K). Elevated temperatures are applied to the semiconductorbody so that dopants diffuse out of the second semiconductor layer 30′into the first semiconductor layer 31′ thus forming an emitter region 30of the BT in the first and second semiconductor layer 30′ and 31′.Unless explicitly mentioned, the order of the described steps may varydependent on the actual implementation of the production process.

Forming the spacers may include forming a first isolation layer 52 onthe semiconductor body 10, depositing a conductive base contact layer 22on the first isolation layer 52, forming a second isolation layer 53 onthe base contact layer 22, and partly removing the first and secondisolation layers 52, 53 and the base contact layer 22 to form an openingO₁ which exposes the top surface of the base region 20 (see FIG. 3F).The spacers 40 are formed on the side surfaces of the opening. The baseregion 20 may be deposited through the opening O₁ on top of thecollector region 12 (see FIG. 3G) such that it is electrically connectedby the base contact layer 22 and it forms a pn-junction with thecollector region 12.

Although the invention has been illustrated and described with respectto one or more implementations, alterations and/or modifications may bemade to the illustrated examples without departing from the spirit andscope of the appended claims. In particular regard to the variousfunctions performed by the above described components or structures(assemblies, devices, circuits, systems, etc.), the terms (including areference to a “means”) used to describe such components are intended tocorrespond, unless otherwise indicated, to any component or structurewhich performs the specified function of the described component (e.g.,that is functionally equivalent), even though not structurallyequivalent to the disclosed structure which performs the function in theherein illustrated exemplary implementations of the invention. Inaddition, while a particular feature of the invention may have beendisclosed with respect to only one of several implementations, suchfeature may be combined with one or more other features of the otherimplementations as may be desired and advantageous for any given orparticular application. Furthermore, to the extent that the terms“including”, “includes”, “having”, “has”, “with”, or variants thereofare used in either the detailed description and the claims, such termsare intended to be inclusive in a manner similar to the term“comprising”.

While this invention has been described with reference to illustrativeembodiments, this description is not intended to be construed in alimiting sense. Various modifications and combinations of theillustrative embodiments, as well as other embodiments of the invention,will be apparent to persons skilled in the art upon reference to thedescription. It is therefore intended that the appended claims encompassany such modifications or embodiments.

What is claimed is:
 1. A bipolar transistor comprising: a semiconductorbody including a collector region and a base region arranged on top ofthe collector region; an insulating spacer arranged on top of the baseregion; and a semiconductor layer including an emitter region arrangedon the base region and laterally enclosed by the insulating spacer,wherein the emitter region is fully located above a plane through abottom side of the insulating spacer.
 2. The bipolar transistor of claim1, wherein the collector region is doped with dopants of a second dopingtype and the base region is, at least partly, doped with dopants of afirst doping type.
 3. The bipolar transistor of claim 2, wherein theemitter region is doped with dopants of the second doping type and thusforms a pn-junction with the base region.
 4. The bipolar transistor ofclaim 3, wherein the emitter region of the second doping type islaterally confined by the insulating spacer and dopants of the emitterregion do not extend into the base region.
 5. The bipolar transistor ofclaim 1, wherein the semiconductor layer further extends throughoutopposing side-walls of the insulating spacer.
 6. The bipolar transistorof claim 1, wherein the collector region is laterally enclosed by ashallow trench isolation.
 7. The bipolar transistor of claim 1, whereinthe base region is laterally enclosed by a first isolation layer.
 8. Thebipolar transistor of claim 7, further comprising: a conductive basecontact layer arranged on the first isolation layer and partiallyarranged on the base region; and a second insulating layer arranged onthe conductive base contact layer, wherein the insulating spacer extendsvertically through the second insulating layer and the conductive basecontact layer down to the base region.
 9. The bipolar transistor ofclaim 8, wherein the conductive base contact layer comprisespolycrystalline silicon.
 10. The bipolar transistor of claim 1, whereinthe semiconductor body includes a highly doped buried collector contactregion adjoining the collector region at its bottom side.
 11. Thebipolar transistor of claim 1, wherein the base region includes a baselayer of a first doping type and more heavily doped than other portionsof the base layer.
 12. The bipolar transistor of claim 1, wherein thebase region is formed of silicon or SiGe.
 13. The bipolar transistor ofclaim 1, wherein a concentration of dopants is inhomogenous within thebase region, and a maximum of the concentration of dopants defines ahighly doped layer at a specific vertical position within the baseregion.
 14. The bipolar transistor of claim 13, wherein the base regionincludes a Si-cap arranged between the highly doped layer and theemitter region.
 15. The bipolar transistor of claim 14, wherein theplane through the bottom side of the insulating space is flat andhorizontal.
 16. A method of forming a bipolar transistor, the methodcomprising: forming a collector region in a semiconductor body; forminga base region on top of the collector region; forming an insulatingspacer on top of the base region; and forming an emitter region on thebase region, wherein the emitter region is laterally enclosed by theinsulating spacer, and the emitter region is fully located above a planethrough a bottom side of the insulating spacer.
 17. The method of claim16, further comprising forming a first isolation layer, wherein the baseregion is laterally enclosed by a first isolation layer.
 18. The methodof claim 17, further comprising: forming a conductive base contact layerarranged on the first isolation layer and partially arranged on the baseregion; and forming a second insulating layer arranged on the conductivebase contact layer, wherein the insulating spacer extends verticallythrough the second insulating layer and the conductive base contactlayer down to the base region.